| 赵景勇,闫康平,薛娱静,孙羽涵.化学通报,2015,78(1):44-48. |
| 光照强度和掺杂浓度对n-PS形貌和电化学行为影响 |
| Effect of illumination intensity and doping concentration on the morphology of n-PS and electrochemical characteristics |
| 投稿时间：2014-04-22 修订日期：2014-06-05 |
| DOI： |
| 中文关键词: 电化学特性 n型多孔硅 掺杂浓度 光照强度 反射率 |
| 英文关键词:electrochemical characteristics, n-PS, doping concentration, illumination intensity, reflectivity |
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| 中文摘要: |
| 测试分析了光照强度和掺杂浓度对n型硅电极电化学特性的影响，采用电化学阳极腐蚀法在光照辅助下制备多孔硅（n-PS），通过扫描电子显微镜（SEM）研究掺杂浓度对n-PS表面微观形貌的影响，通过积分球测试仪测试研究了多孔硅对光的反射率。结果表明：对于n型硅，光照是激发空穴的必要手段，光照强度越强，硅/电解液界面的电荷转移阻抗越小，更利于反应的进行；掺杂浓度越高，电化学极化阻力越小，促进PS孔密度增加。本实验条件下，形成的多孔硅是微米级孔，随着掺杂浓度的增加，形成的多孔硅孔径越小，孔深存在一个极值；电阻率为0.35Ω?cm的硅片拥有最大的孔深13μm；多孔硅的孔结构大大提升了硅基对光子的捕获能力，相比于单晶硅，在可见-近红外范围，电阻率为0.0047Ω?cm的硅片制备的多孔硅对光的反射率已经从30%降低到了5%。 |
| 英文摘要: |
| The electrochemical characteristics of Si-electrode affected by illumination intensity and doping concentration was studied systematically. Porous silicon (n-PS) was prepared on monocrystalline silicon wafer substrate by electrochemical etching under the light-assisted. The scanning electron microscopy (SEM) was used to observe the microstructure of the PS hold the different doping concentration. The integrating sphere detector also was used to test the luminous reflectance of the PS. The results show that illumination is necessary for the n-type silicon, and the greater of the illumination intensity, the smaller of the electronic transfer impedance, the reaction become more easily; the PS hold micron sized pore, and with the increase of the doping concentration, the diameter of the pore become much smaller, the depth hold a best level. In our study, the best one is 13μm in the resistivity of 0.35Ω?cm. The ability of capturing photon is improved with the help of the structure of the PS. Compared with the monocrystalline silicon, the luminous reflectance decrease from 30% to 5% in the scope of visible to near-infrared. |
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