杜梦凡,陈啟荣,邹钰,杨凯萌,胡舰心,孟祥福.化学通报,2020,83(3):232-239.
熔融盐法制备富氧空位TiO2纳米片及其光催化性能
Molten Salt Synthesis of TiO2 Nanosheet with Rich Oxygen Vacancies and Its Photocatalytic Activity
投稿时间:2019-11-25  修订日期:2019-12-28
DOI:
中文关键词:  二氧化钛  熔融盐  氧空位  缺陷  光催化活性
英文关键词:Titanium dioxide  Molten salt  Oxygen vacancies  Defects  Photocatalytic activity
基金项目:北京市教育委员会科技计划项目(KM20180028009)资助
作者单位E-mail
杜梦凡 首都师范大学化学系 北京 100048  
陈啟荣 北京市科学技术研究院北京市理化分析测试中心 北京 100089  
邹钰 首都师范大学化学系 北京 100048  
杨凯萌 首都师范大学化学系 北京 100048  
胡舰心 首都师范大学化学系 北京 100048  
孟祥福 首都师范大学化学系 北京 100048 xfmeng@cnu.edu.cn 
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中文摘要:
      氧空位缺陷对半导体材料性能的积极作用引起人们越来越多的关注。本文中,以TiCl4在三氟乙酸中的水解产物为前驱体,通过一步熔融盐法成功合成了具有富氧空位的蓝色TiO2纳米片。由于熔融盐低的氧分压,使前驱体在煅烧过程中消耗了TiO2中的晶格氧从而产生大量的氧空位和Ti3+。紫外-可见漫反射光谱测试表明,蓝色TiO2纳米片的带隙宽度减小至2.69eV,光吸收范围从紫外光区拓宽到可见光区。所制备的蓝色TiO2纳米片表现出优异的光催化活性,在全光谱照射下,对若丹明B的光降解速率是纯TiO2的47.3倍。同时,形成的晶格氟掺杂能有效地稳定氧空位,极大地提高了光生载流子的分离效率。本工作为在半导体氧化物材料内构建氧空位提供了新的思路。
英文摘要:
      The positive effects of oxygen vacancy defects on the performance of semiconductor materials are attracting increasing attention. Herein, blue TiO2 nanosheet with rich oxygen vacancies was successfully synthesized via a one-step molten salt method using the hydrolysis product of TiCl4 in trifluoroacetic acid as a precursor. Due to the low oxygen partial pressure of the molten salt, the lattice oxygen of TiO2 was consumed during calcination, leading to a large amount of oxygen vacancies and Ti3+. UV-Visible diffuse reflectance spectroscopy showed that the band gap of blue TiO2 nanosheets was reduced to 2.69 eV, and the light adsorption range was extended from the ultraviolet region to the visible region. The as-prepared blue TiO2 nanosheets exhibits excellent photocatalytic activity, and the photodegradation rate of rhodamine B is 47.3 times that of pure TiO2 under full-spectrum light irradiation. At the same time, the formed lattice fluorine doping can effectively stabilize the oxygen vacancies and greatly improve the separation efficiency of the photogenerated carriers. This work provides a new insight for constructing oxygen vacancies in semiconductor oxide materials.
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