康杰,宋月鹏,丁紫阳,孙为云,李连荣.化学通报,2021,84(1):69-74,95.
腐蚀法制备工艺对SiC量子点光学性质的影响
Effect of Etching Fabrication Method on Optical Properties of SiC Quantum Dots
投稿时间:2020-08-03  修订日期:2020-09-01
DOI:
中文关键词:  碳化硅量子点  光学性质  微观形貌  光致发光强度  发射光谱
英文关键词:Silicon carbide quantum dots(QDs)  Optical properties  Micromorphology  Photoluminescence intensity (PL)  Emission spectrum
基金项目:山东省科技发展计划项目(2014GGX102012)和山东省现代农业产业技术体系果品产业创新团队项目(SDAIT-06-12)资助
作者单位E-mail
康杰 郑州职业技术学院材料工程系 郑州 450121 kangzhenjie2006@163.com 
宋月鹏 山东农业大学机械与电子工程学院 泰安 271000  
丁紫阳 郑州职业技术学院材料工程系 郑州 450121  
孙为云 郑州职业技术学院材料工程系 郑州 450121  
李连荣 郑州职业技术学院材料工程系 郑州 450121  
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中文摘要:
      通过可控的化学腐蚀法制备碳化硅量子点,以氢氟酸和硝酸的混合液为腐蚀剂腐蚀自蔓延燃烧合成的原始碳化硅粉体,而后经超声空化作用及高速离心层析裁剪获得水相的碳化硅量子点,研究了制备工艺参数对量子点光致发光强度、发射波长等光谱特性及粒子尺寸的影响,结果表明,腐蚀剂组分及其配比是影响量子点光致发光强度的主要因素,而超声振动时间和层析裁剪的离心超重力系数在一定程度上对光致发光强度有影响,二者对光学性能的影响主要体现在特征发射波长的移动、半峰宽、量子点尺寸大小及其粒径分布的均匀性。此外,在腐蚀剂组分调整的过程中发现,以适量的分析纯硫酸替代原腐蚀剂中的部分硝酸,则不仅会引起量子点光致发光强度的变化,而且表面还会偶合上除羧基、羟基外的新官能团巯基。
英文摘要:
      Silicon carbide quantum dots (QDs) were prepared by a controllable chemical etching method. The original SiC powders synthesized by self propagating high temperature synthesis (SHS) were corroded by a mixture of hydrofluoric acid and nitric acid. Then, the aqueous phase SiC QDs were obtained by ultrasonic cavitation and high-speed centrifugal chromatography. The effects of preparation parameters on the photoluminescence intensity, emission wavelength spectra and particle size of QDs were studied. The results showed that the composition and ratio of the etchant are the main factors affecting the photoluminescence intensity of QDs, while the ultrasonic vibration time and the centrifugal high gravity coefficient of the chromatographic clipping have an effect on the photoluminescence intensity to a certain extent. The main factors affecting the optical properties of the two factors are the shift of the characteristic emission wavelength, the half peak width, the size of the quantum dots and the particle size distribution uniformity. In addition, in the process of adjusting the composition of the etchant, it is found that replacing part of nitric acid in the original etchant with an appropriate amount of analytically pure sulfuric acid will not only change the photoluminescence intensity of QDs, but also coupled with new functional groups sulfhydryl except carboxyl and hydroxyl groups on the surface.
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