| 周覃艺,陈雁琳,赵朔,胡宝山,谭陆西.化学通报,2025,88(7):761-766. |
| 基于回收ABS的碳电极制备及其n型有机场效应晶体管 |
| Fabrication and Application of Carbon Electrodes based on ABS in n-type Organic Field-Effect Transistors |
| 投稿时间：2025-03-24 修订日期：2025-04-10 |
| DOI： |
| 中文关键词: 非晶碳电极 有机场效应晶体管 |
| 英文关键词:Amorphous carbon electrodes Organic field-effect transistors |
| 基金项目:国家自然科学基金项目(52472044)资助 |
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| 摘要点击次数: 32 |
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| 中文摘要: |
| 有机半导体材料及器件的快速发展正推动现代电子技术革新,其中有机场效应晶体管(OFETs)因其独特的载流子调控特性,在新型显示技术等领域展现出重要应用潜力。电极与有机半导体材料的能级匹配影响着载流子注入,是制约OFETs性能提升的关键之一。目前,常见的高功函金属电极Au与n-型半导体材料见具有较高的注入能垒,而低功函金属Ag和Al等在空气中易氧化导致器件性能衰退。本研究以回收商业ABS树脂为碳源,采用化学气相沉积技术在基底表面直接生长图案化非晶碳电极,为树脂废弃物资源化利用提供了新途径。所制备电极表现出与金属性高导电特性,电导率达到1140 S/m。功函为4.19 eV,与金属Ag接近。基于该碳电极与带有萘二酰亚胺结构和联噻吩结构的n型半导体材料N2200构建的OFETs器件实现了0.28 cm2·V?1·s?1的载流子迁移率。 |
| 英文摘要: |
| The rapid development of organic semiconductor materials and devices is driving innovation in modern electronics. Organic field-effect transistors (OFETs), with their unique carrier modulation characteristics, demonstrate significant application potential in emerging display technologies. The energy level alignment between electrodes and organic semiconductor materials critically affects carrier injection and remains a key challenge in enhancing OFET performance. Conventional high-work-function metal electrodes like Au exhibit substantial injection barriers with n-type semiconductors, while low-work-function metals such as Ag and Al are prone to oxidation in air, leading to device degradation. This study presents a novel approach for recycling waste resin by utilizing reclaimed commercial ABS resin as a carbon source. Through chemical vapor deposition technology, patterned amorphous carbon electrodes were directly grown on substrate surfaces. The fabricated electrodes demonstrate metallic conductivity with an electrical conductivity of 1140 S/m and a work function of 4.19 eV, comparable to metallic Ag. OFET devices constructed with these carbon electrodes and the n-type semiconductor N2200 (featuring naphthalene diimide and bithiophene structures) achieved a carrier mobility of 0.28 cm2·V?1·s?1. This work provides new insights for both waste resin utilization and the development of high-performance n-type organic electronic devices. |
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